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032019-12
The production process and technology of silicon carbide (SiC) devices have become increasingly mature, and the biggest obstacle to market promotion is cost. This includes the cost of R&D and production costs as well as.. MORE
032019-12
Since the working state of the power electronic device has four working states: on, on state, off state, and off state, the interrupt state and the on state are respectively subjected to high voltage and large current, and .. MORE
032019-12
First: the need to reduce costs. Taking two points as an example, directly purchasing the finished module of SEMIKRON and other manufacturers can improve the stability of the product, but the corresponding cost increase is .. MORE
032019-12
1. Drive circuit: Due to the trade-off between UCE (sat) and short-circuit tolerance of IGBT, it is recommended to select the gate voltage as +UG=15V±10%,—UG =5~10V. The gate resistance is closely related to the turn-on a.. MORE
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