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Description

For MOSFET/IGBT drive, the core can take the lead in developing a drive IC in China, which has high reliability and wide compatibility, and can meet the diversified needs of consumer, household appliances, industry, new energy and other fields for motor drive and power conversion.
The core drive IC has the functions of over-current protection, undervoltage protection, anti pass through, dead zone, etc., with stronger drive capability. It can integrate bootstrap diodes, which can help customers simplify the system and save costs.

IC Features and Benefits:

  • High breakdown voltage, 800V
  • Integrated BSD
  • High negative pressure withstand, - 100V/50ns
  • Low level switching loss
  • High dv/dt, 50V/ns
  • Input compatible 3.3V/5V/15V
  • High driving capacity up to 3A
  • VCC/VBS power clamp
Driver IC
Parameters
Drive mode Model Channel Voffset Max(V) IO +/- (mA) Deadtime (ns) ton/off (ns) BSD Package
HVIC
Half-bridge XN2304S 2 600 290/600 100 250/250 N/A SOP8
XN2101S 2 600 290/600 N/A 90/90 N/A SOP8
XN21011S 2 600 10/20 300 380/380 SOP8
XN21012S 2 600 50/100 300 380/380 SOP8
XN2001S 2 200 3000/3000 500 60/60 N/A SOP8
Three-phase XN2136S 6 600 200/350 300 400/400 N/A SOP28
XN21364S 6 600 200/350 300 400/400 N/A SOP28
Low-Side Driver
Single channel XN44272L 1 25 1500/1500 N/A 50/50 N/A SOT23
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